SK Hynix HMT425S6CFR6A-PB 2GB vs Hypertec G2RT-4AFT00 16GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Hypertec G2RT-4AFT00 16GB

Hypertec G2RT-4AFT00 16GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Hypertec G2RT-4AFT00 16GB

需要考虑的原因
Hypertec G2RT-4AFT00 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 41

左右 -86% 更低的延时
更快的读取速度，GB/s

17.1 10.1

测试中的平均数值
更快的写入速度，GB/s

14.5 7.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Hypertec G2RT-4AFT00 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 22
读取速度，GB/s

10.1 17.1
写入速度，GB/s

7.1 14.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1484 3234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8213.C8FH1 8GB

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Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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Crucial Technology BL32G32C16U4WL.M16FB 32GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

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G Skill Intl F4-3200C16-32GTRG 32GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Kingston KF3600C16D4/16GX 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB