SK Hynix HMT451S6BFR8A-PB 4GB vs Corsair CMD8GX4M2B3600C18 4GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Corsair CMD8GX4M2B3600C18 4GB

Corsair CMD8GX4M2B3600C18 4GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

Corsair CMD8GX4M2B3600C18 4GB

需要考虑的原因
Corsair CMD8GX4M2B3600C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 44

左右 -100% 更低的延时
更快的读取速度，GB/s

18.1 12.3

测试中的平均数值
更快的写入速度，GB/s

14.4 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMD8GX4M2B3600C18 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 22
读取速度，GB/s

12.3 18.1
写入速度，GB/s

7.8 14.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1977 3010

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD8GX4M2B3600C18 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Avant Technology J642GU42J5213N4 16GB

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Kingston 9905702-010.A00G 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB