SK Hynix HYMP112S64CP6-S6 1GB vs Kingston 9905678-042.A00G 8GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

Kingston 9905678-042.A00G 8GB

Kingston 9905678-042.A00G 8GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值

Kingston 9905678-042.A00G 8GB

需要考虑的原因
Kingston 9905678-042.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 65

左右 -183% 更低的延时
更快的写入速度，GB/s

9.5 1,711.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

Kingston 9905678-042.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 23
读取速度，GB/s

4,018.7 15.9
写入速度，GB/s

1,711.1 9.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

513 2611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX4000C19D4/8GX 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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SK Hynix HMA41GR7BJR4N-UH 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-3200C14-8GTZN 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

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Kingston ACR24D4S7D8MB-16 16GB