SK Hynix HYMP112U64CP8-S6 1GB vs Avant Technology W642GU44J2320NC 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Avant Technology W642GU44J2320NC 16GB

Avant Technology W642GU44J2320NC 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 19.5

测试中的平均数值
更快的写入速度，GB/s

2,076.1 14.6

测试中的平均数值

Avant Technology W642GU44J2320NC 16GB

需要考虑的原因
Avant Technology W642GU44J2320NC 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 59

左右 -84% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Avant Technology W642GU44J2320NC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 32
读取速度，GB/s

4,723.5 19.5
写入速度，GB/s

2,076.1 14.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

741 3572

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2666C16S4/32G 32GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CML16GX3M2A1600C10 8GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

Corsair CMY8GX3M2A2666C10 4GB

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AMD AE34G2139U2 4GB

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Chun Well Technology Holding Limited CL18-20-20 D4-3200

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Corsair CMK128GX4M8X3800C19 16GB

Corsair CMK128GX4M8X3800C19 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Mushkin 99[2/7/4]208F 8GB

Mushkin 99[2/7/4]208F 8GB

OCZ OCZ2B1200LV2G 2GB

OCZ OCZ2B1200LV2G 2GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB