SK Hynix HYMP112U64CP8-S6 1GB vs G Skill Intl F4-3200C16-16GSXFB 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 18.5

测试中的平均数值
更快的写入速度，GB/s

2,076.1 14.2

测试中的平均数值

G Skill Intl F4-3200C16-16GSXFB 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GSXFB 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 59

左右 -168% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-3200C16-16GSXFB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 22
读取速度，GB/s

4,723.5 18.5
写入速度，GB/s

2,076.1 14.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

741 3392

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M393B5270CH0-CH9 4GB

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Essencore Limited KD48GS88C-32N2200 8GB

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A-DATA Technology DDR3 1333G 2GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Corsair CM4X8GE3000C15K4 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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AMD R538G1601U2S 8GB

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Heoriady M471A1K43CB1-CTD 8GB

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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

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EVGA 16G-D4-2400-MR 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

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Samsung M378B5273CH0-CH9 4GB

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Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB