SK Hynix HYMP112U64CP8-Y5 1GB vs Corsair CMR16GX4M2C3600C18 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Corsair CMR16GX4M2C3600C18 8GB

Corsair CMR16GX4M2C3600C18 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 18.8

测试中的平均数值

Corsair CMR16GX4M2C3600C18 8GB

需要考虑的原因
Corsair CMR16GX4M2C3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 62

左右 -121% 更低的延时
更快的写入速度，GB/s

14.6 1,658.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMR16GX4M2C3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 28
读取速度，GB/s

4,216.7 18.8
写入速度，GB/s

1,658.4 14.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

688 3458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology CT8G4DFD8213.16FA2 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMR16GX4M2C3600C18 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston 9965516-430.A00G 16GB

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V-Color Technology Inc. TL48G30S8KGRGB15 8GB

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Kingston 99U5584-001.A00LF 4GB

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Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston KHX2400C15/8G 8GB

Kingston KHX2400C15/8G 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Avant Technology J642GU42J7240N4 16GB

Avant Technology J642GU42J7240N4 16GB