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SK Hynix HYMP125U64CP8-S6 2GB
Kingston KF3200C20S4/8G 8GB

SK Hynix HYMP125U64CP8-S6 2GB vs Kingston KF3200C20S4/8G 8GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,381.6 left arrow 13.3
    测试中的平均数值
Kingston KF3200C20S4/8G 8GB 需要考虑的原因
Kingston KF3200C20S4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 60
    左右 -40% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
Kingston KF3200C20S4/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 43
  • 读取速度，GB/s
    5,082.2 left arrow 15.4
  • 写入速度，GB/s
    2,381.6 left arrow 13.3
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    925 left arrow 2776

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

Kingston KF3200C20S4/8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX8500D2K2/2GN 1GB
Kingston KHX8500D2K2/2GN 1GB
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston KF3200C20S4/8G 8GB
Kingston KF3200C20S4/8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR26D4S9S8HJ-8 8GB
Kingston ACR26D4S9S8HJ-8 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-2400C17-4GFX 4GB
G Skill Intl F4-2400C17-4GFX 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9965596-036.B00G 8GB
Kingston 9965596-036.B00G 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Samsung M471A4G43AB1-CWE 32GB
Samsung M471A4G43AB1-CWE 32GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
V-GEN D4M8GL26A8TS6 8GB
V-GEN D4M8GL26A8TS6 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Transcend Information TS1GLH72V1H 8GB
Transcend Information TS1GLH72V1H 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMW16GX4M2K4000C19 8GB
Corsair CMW16GX4M2K4000C19 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK32GX4M4B4000C19 8GB
Corsair CMK32GX4M4B4000C19 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
内存RAM