SK Hynix HYMP512U64CP8-Y5 1GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

总分

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

差异规格评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB

报告一个错误

低于PassMark测试中的延时，ns

63 101

左右 38% 更低的延时
更快的读取速度，GB/s

3 12.1

测试中的平均数值

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

需要考虑的原因
InnoDisk Corporation M4C0-AGS1TCSJ 16GB

报告一个错误

更快的写入速度，GB/s

6.7 1,583.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512U64CP8-Y5 1GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 101
读取速度，GB/s

3,895.6 12.1
写入速度，GB/s

1,583.7 6.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

639 1382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664BA160B.C8FK 2GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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SK Hynix HMAA2GS6CJR8N-XN 16GB

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Essencore Limited KD48GU88A-26N1600 8GB

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Crucial Technology BLS8G4D26BFSE.16FB 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology CT8G4SFRA266.C8FD1 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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V-Color Technology Inc. TA48G36S818BNK 8GB