Smart Modular SF564128CJ8N6NNSEG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

总分

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

差异规格评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB

需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 5% 更低的延时
更快的读取速度，GB/s

12.3 10.4

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

报告一个错误

更快的写入速度，GB/s

7.8 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Smart Modular SF564128CJ8N6NNSEG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 37
读取速度，GB/s

12.3 10.4
写入速度，GB/s

7.3 7.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1570 2213

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT16G48C40U5.M8A1 16GB

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Apacer Technology 78.CAGSZ.4070B 8GB

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Kingston 9965516-430.A00G 16GB

Corsair CMU32GX4M2C3200C16 16GB

Corsair CMU32GX4M2C3200C16 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

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SK Hynix HMT425S6AFR6A-PB 2GB

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Crucial Technology BL8G32C16U4BL.8FE 8GB

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Kingston ACR24D4S7S1MB-4 4GB

Kingston ACR24D4S7S1MB-4 4GB