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SpecTek Incorporated ?????????????????? 2GB
Samsung M378A5143DB0-CPB 4GB

SpecTek Incorporated ?????????????????? 2GB vs Samsung M378A5143DB0-CPB 4GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.4
    测试中的平均数值
Samsung M378A5143DB0-CPB 4GB 需要考虑的原因
Samsung M378A5143DB0-CPB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 54
    左右 -50% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
Samsung M378A5143DB0-CPB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 36
  • 读取速度，GB/s
    4,269.3 left arrow 14.4
  • 写入速度，GB/s
    1,781.8 left arrow 10.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    618 left arrow 2490

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

Samsung M378A5143DB0-CPB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M378A5143DB0-CPB 4GB
Samsung M378A5143DB0-CPB 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
Apacer Technology 78.A1GA0.9L4 2GB
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内存RAM
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内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Kingston 99P5471-002.AOOLF 4GB
Kingston 99P5471-002.AOOLF 4GB
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Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
内存RAM
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Kingston 99U5471-020.A00LF 4GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Golden Empire CL16-18-18 D4-3400 4GB
内存RAM
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内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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Kingston 9965640-006.A01G 32GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Corsair CMU32GX4M4C3466C16 8GB
Corsair CMU32GX4M4C3466C16 8GB
内存RAM