STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology BLS8G4D240FSE.16FBD2 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSE.16FBD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 63

左右 -91% 更低的延时
更快的写入速度，GB/s

11.2 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 33
读取速度，GB/s

3,231.0 15.7
写入速度，GB/s

1,447.3 11.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 2851

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M4 70T2864QZ3-CF7 1GB

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AMD R538G1601U2S 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB