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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3466C16-4GTZ 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3466C16-4GTZ 4GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 20
    测试中的平均数值
G Skill Intl F4-3466C16-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-3466C16-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 63
    左右 -232% 更低的延时
  • 更快的写入速度，GB/s
    15.8 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3466C16-4GTZ 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 19
  • 读取速度，GB/s
    3,231.0 left arrow 20.0
  • 写入速度，GB/s
    1,447.3 left arrow 15.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    478 left arrow 3192

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

G Skill Intl F4-3466C16-4GTZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3466C16-4GTZ 4GB
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Samsung M378B5673EH1-CF8 2GB
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Kingston KCDT82-MIE 4GB
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Micron Technology 18HTF12872AY-800F1 1GB
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G Skill Intl F4-3466C16-8GTZSK 8GB
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G Skill Intl F4-3600C17-16GTZR 16GB
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内存RAM
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内存RAM
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Crucial Technology CT4G4DFS8266.M8FE 4GB
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