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takeMS International AG TMS2GB264D082-805G 2GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

takeMS International AG TMS2GB264D082-805G 2GB vs Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

总分
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 16.8
    测试中的平均数值
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 46
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 23
  • 读取速度，GB/s
    5,535.6 left arrow 16.8
  • 写入速度，GB/s
    1,852.4 left arrow 12.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 2795

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB RAM的比较

Kingston 99U5471-052.A00LF 8GB
G Skill Intl F3-2133C9-4GAB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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Essencore Limited KD48GU88C-26N1600 8GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMT128GX4M4C3200C16 32GB
Corsair CMT128GX4M4C3200C16 32GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK16GX4M4A2666C15 4GB
Corsair CMK16GX4M4A2666C15 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
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A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Micron Technology 8HTF12864HZ-800H1 1GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
内存RAM
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
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Crucial Technology CT4G4DFS8213.C8FHP 4GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
内存RAM
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
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A-DATA Technology DDR4 2666 8GB
V-GEN D4H4GS24A8 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM