takeMS International AG TMS2GB264D082-805G 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

takeMS International AG TMS2GB264D082-805G 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 16.9

测试中的平均数值

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

13.4 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

5,535.6 16.9
写入速度，GB/s

1,852.4 13.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 3257

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D30AESCK.M8FE 8GB

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Kingston HX424C15FB/16 16GB

Kingston HX424C15FB/16 16GB

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Samsung M378A1G43DB0-CPB 8GB

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Gloway International (HK) STKD4GAM2400-F 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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SK Hynix HMA82GU6CJR8N-XN 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB