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takeMS International AG TMS2GB264D083805EV 2GB
Gloway International (HK) STK4U2400D17081C 8GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Gloway International (HK) STK4U2400D17081C 8GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Gloway International (HK) STK4U2400D17081C 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
17.1
测试中的平均数值
需要考虑的原因
Gloway International (HK) STK4U2400D17081C 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
50
左右 -117% 更低的延时
更快的写入速度,GB/s
12.5
1,457.4
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Gloway International (HK) STK4U2400D17081C 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
23
读取速度,GB/s
3,757.3
17.1
写入速度,GB/s
1,457.4
12.5
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
557
2960
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STK4U2400D17081C 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK64GX4M2C3200C16 32GB
A-DATA Technology DDR4 2400 16GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX318C10FR/8G 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3466C16-16GTZSW 16GB
A-DATA Technology VDQVE1B16 2GB
Transcend Information TS1GSH64V1H 8GB
Golden Empire CL5-5-5DDR2 1GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3000C15-8GRRB 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
报告一个错误
×
Bug description
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