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takeMS International AG TMS2GB264D083805EV 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
18.7
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
50
左右 -85% 更低的延时
更快的写入速度,GB/s
17.8
1,457.4
测试中的平均数值
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
27
读取速度,GB/s
3,757.3
18.7
写入速度,GB/s
1,457.4
17.8
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
557
3963
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston HP26D4U9D8ME-16X 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M471A2G43AB2-CWE 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Crucial Technology CT51264BD160B.C16F 4GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
Samsung M471B1G73DB0-YK0 8GB
Kllisre M378A5143EB2-CRC 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Kingston KHX1600C9S3L/8G 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C19-8GSXK 8GB
Samsung DDR3 8GB 1600MHz 8GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMK16GX4M4A2666C16 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9905678-043.A00G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK16GX4M2G4000C16 8GB
SpecTek Incorporated ?????????????????? 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Ramaxel Technology RMT3010EC58E8F1333 2GB
G Skill Intl F4-3200C16-8GTRG 8GB
报告一个错误
×
Bug description
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