Transcend Information TS512MSK64W6H 4GB vs G Skill Intl F4-4400C18-8GTRS 8GB

总分

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

总分

G Skill Intl F4-4400C18-8GTRS 8GB

G Skill Intl F4-4400C18-8GTRS 8GB

差异规格评论

差异

Transcend Information TS512MSK64W6H 4GB

需要考虑的原因
Transcend Information TS512MSK64W6H 4GB

报告一个错误

G Skill Intl F4-4400C18-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4400C18-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 29

左右 -71% 更低的延时
更快的读取速度，GB/s

21.1 12.1

测试中的平均数值
更快的写入速度，GB/s

19.6 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Transcend Information TS512MSK64W6H 4GB

G Skill Intl F4-4400C18-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 17
读取速度，GB/s

12.1 21.1
写入速度，GB/s

8.0 19.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1989 3829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

G Skill Intl F4-4400C18-8GTRS 8GB

G Skill Intl F4-4400C18-8GTRS 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BL8G26C16U4B.8FE 8GB

Crucial Technology BL8G26C16U4B.8FE 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Kingston KHX2400C15S4/16G 16GB

Kingston KHX2400C15S4/16G 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Transcend Information JM3200HLE-16G 16GB

Transcend Information JM3200HLE-16G 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N