Transcend Information TS512MSK64W6H 4GB vs G Skill Intl F4-4600C18-8GTZR 8GB

总分

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

总分

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

差异规格评论

差异

Transcend Information TS512MSK64W6H 4GB

需要考虑的原因
Transcend Information TS512MSK64W6H 4GB

报告一个错误

G Skill Intl F4-4600C18-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4600C18-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 29

左右 -32% 更低的延时
更快的读取速度，GB/s

19.3 12.1

测试中的平均数值
更快的写入速度，GB/s

17.3 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Transcend Information TS512MSK64W6H 4GB

G Skill Intl F4-4600C18-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 22
读取速度，GB/s

12.1 19.3
写入速度，GB/s

8.0 17.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1989 3653

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4X16GE2666C16K4 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

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Kingston HX421C14FB/4 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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A-DATA Technology AO1P26KCST2-BWWS 16GB

Kingston KHX2400C11D3/4GX 4GB

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G Skill Intl F4-3200C16-8GTZSK 8GB

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Kingston KVR533D2N4 512MB

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Samsung M378A1G43DB0-CPB 8GB

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A-DATA Technology AO1E34RCSV1-BF1S 16GB