TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMW64GX4M2E3200C16 32GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMW64GX4M2E3200C16 32GB

Corsair CMW64GX4M2E3200C16 32GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.7

测试中的平均数值
更快的写入速度，GB/s

870.4 14.5

测试中的平均数值

Corsair CMW64GX4M2E3200C16 32GB

需要考虑的原因
Corsair CMW64GX4M2E3200C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 87

左右 -181% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMW64GX4M2E3200C16 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 31
读取速度，GB/s

3,155.6 16.7
写入速度，GB/s

870.4 14.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3598

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT4G4SFS8213.C8FDD2 4GB

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Samsung M471B5273CH0-CH9 4GB

A-DATA Technology AO1P32MCST2-BW4S 16GB

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