TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMWX16GC3200C16W2E 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMWX16GC3200C16W2E 16GB

Corsair CMWX16GC3200C16W2E 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.6

测试中的平均数值
更快的写入速度，GB/s

870.4 15.4

测试中的平均数值

Corsair CMWX16GC3200C16W2E 16GB

需要考虑的原因
Corsair CMWX16GC3200C16W2E 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 87

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMWX16GC3200C16W2E 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 28
读取速度，GB/s

3,155.6 17.6
写入速度，GB/s

870.4 15.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3705

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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PNY Electronics PNY 2GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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G Skill Intl F4-3000C16-16GSXKB 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

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G Skill Intl F4-2800C16-8GVR 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

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G Skill Intl F3-2400C11-8GSR 8GB

Samsung M378A2K43BB1-CPB 16GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Kingston KHX3466C19D4/8G 8GB

Kingston KHX3466C19D4/8G 8GB