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TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
14.3
测试中的平均数值
更快的写入速度,GB/s
870.4
11.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
87
左右 -211% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
28
读取速度,GB/s
3,155.6
14.3
写入速度,GB/s
870.4
11.4
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
417
2481
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB RAM的比较
Samsung M471B5173QH0-YK0 4GB
Kingston 99U5458-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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AMD R538G1601U2S 8GB
V-Color Technology Inc. TA48G32S816SK 8GB
SpecTek Incorporated ?????????????????? 2GB
Apacer Technology 78.CAGPP.ARC0B 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3200C15-16GTZR 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Apacer Technology 76.B305G.D500B 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-5333C22-8GTRG 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3733C17-8GTZA 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston 9905624-043.A00G 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-2400C15-8GRR 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C16-16GTZ 16GB
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M471A2K43CB1-CRC 16GB
报告一个错误
×
Bug description
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