TwinMOS 8DHE3MN8-HATP 2GB vs SK Hynix HMAA1GU6CJR6N-XN 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.7

测试中的平均数值
更快的写入速度，GB/s

870.4 10.6

测试中的平均数值

SK Hynix HMAA1GU6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GU6CJR6N-XN 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 87

左右 -156% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 34
读取速度，GB/s

3,155.6 16.7
写入速度，GB/s

870.4 10.6
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

417 2789

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD32GX4M4C3200C14T 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F3-1866C8-8GTX 8GB

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Samsung M471A1A43DB0-CPB 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB

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Kingston KVR800D2N6/2G 2GB

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Kingston XRMWRN-MIE 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB