TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-3200C16-16GSXWB 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-3200C16-16GSXWB 16GB

G Skill Intl F4-3200C16-16GSXWB 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.6

测试中的平均数值

G Skill Intl F4-3200C16-16GSXWB 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GSXWB 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 53

左右 -112% 更低的延时
更快的写入速度，GB/s

15.1 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3200C16-16GSXWB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 25
读取速度，GB/s

3,726.4 19.6
写入速度，GB/s

1,590.1 15.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3774

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Samsung M471A5244CB0-CTD 4GB

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SK Hynix HMA81GU7CJR8N-VK 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

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Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology CT16G4SFD8266.M16FJ 16GB