TwinMOS 9DNPBNZB-TATP 4GB vs Avant Technology W6451U48J7240N6 4GB

总分

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分

Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

差异规格评论

差异

TwinMOS 9DNPBNZB-TATP 4GB

需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 75

左右 67% 更低的延时
更快的写入速度，GB/s

8.4 6.4

测试中的平均数值

Avant Technology W6451U48J7240N6 4GB

需要考虑的原因
Avant Technology W6451U48J7240N6 4GB

报告一个错误

更快的读取速度，GB/s

14.7 12.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

TwinMOS 9DNPBNZB-TATP 4GB

Avant Technology W6451U48J7240N6 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 75
读取速度，GB/s

12.5 14.7
写入速度，GB/s

8.4 6.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2180 1590

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965604-001.D00G 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HMA851U6AFR6N-UH 4GB

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TwinMOS 9DNPBNZB-TATP 4GB

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Avant Technology W6451U48J7240N6 4GB

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Kingston 99U5428-040.A00LF 4GB

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Crucial Technology CT8G4DFRA266.C8FP 8GB

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Samsung M378B5773CH0-CH9 2GB

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Ramaxel Technology RMSA3260MH78HAF-2666 8GB

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AMD AE34G2139U2 4GB

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Micron Technology 9ASF51272PZ-2G1B1 4GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

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Transcend Information TS512MSK64W6H 4GB

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Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Samsung M393B2G70BH0-CK0 16GB

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Kingston XW21KG-HYD-NX 8GB

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