TwinMOS 9DNPBNZB-TATP 4GB vs Panram International Corporation W4U2133PS-8G 8GB

总分

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分

Panram International Corporation W4U2133PS-8G 8GB

Panram International Corporation W4U2133PS-8G 8GB

差异规格评论

差异

TwinMOS 9DNPBNZB-TATP 4GB

需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB

报告一个错误

Panram International Corporation W4U2133PS-8G 8GB

需要考虑的原因
Panram International Corporation W4U2133PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 -4% 更低的延时
更快的读取速度，GB/s

15.6 12.5

测试中的平均数值
更快的写入速度，GB/s

11.3 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

TwinMOS 9DNPBNZB-TATP 4GB

Panram International Corporation W4U2133PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 24
读取速度，GB/s

12.5 15.6
写入速度，GB/s

8.4 11.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2180 2767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMK16GX4M2Z3600C20 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Nanya Technology NT8GA64D88AX3S-HR 8GB