Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology CT16G4DFD8266.C16FJ 16GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 15.6

测试中的平均数值

Crucial Technology CT16G4DFD8266.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 96

左右 -174% 更低的延时
更快的写入速度，GB/s

12.5 1,336.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 35
读取速度，GB/s

2,725.2 15.6
写入速度，GB/s

1,336.0 12.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

438 3060

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5403-036.A00G 4GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMSX32GX4M2A2666C18 16GB

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Samsung M378A1K43BB1-CRC 8GB

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G Skill Intl F4-4266C19-8GTRS 8GB

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G Skill Intl F4-2800C16-4GRR 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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A-DATA Technology AO1P26KCST2-BZISHC 16GB

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Kingston KF3200C20S4/32GX 32MB

Kingston KF3200C20S4/32GX 32MB

Kingston KF3200C20S4/32GX 32MB

Kingston KF3200C20S4/32GX 32MB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Avant Technology J642GU42J5213N2 16GB

Avant Technology J642GU42J5213N2 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston 9965589-031.D01G 2GB

Kingston 9965589-031.D01G 2GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Apacer Technology 78.D2GG7.AU30B 16GB

Apacer Technology 78.D2GG7.AU30B 16GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB