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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology CT16G4SFD8213.C16FBR 16GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Crucial Technology CT16G4SFD8213.C16FBR 16GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
13.4
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FBR 16GB
报告一个错误
低于PassMark测试中的延时,ns
38
96
左右 -153% 更低的延时
更快的写入速度,GB/s
10.0
1,336.0
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
38
读取速度,GB/s
2,725.2
13.4
写入速度,GB/s
1,336.0
10.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
438
2439
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD R538G1601U2S 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
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Transcend Information TS512MSH64V4H 4GB
Corsair CMV4GX3M1B1600C11 4GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CB4GU2400.M8E 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMK32GX4M4Z2933C16 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
Samsung M323R2GA3BB0-CQKOD 16GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Neo Forza GKE160SO204808-3200 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Samsung M471A2K43CB1-CTD 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
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Bug description
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