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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
低于PassMark测试中的延时,ns
96
122
左右 21% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
报告一个错误
更快的读取速度,GB/s
9.4
2
测试中的平均数值
更快的写入速度,GB/s
5.8
1,336.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
122
读取速度,GB/s
2,725.2
9.4
写入速度,GB/s
1,336.0
5.8
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
438
1411
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM的比较
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Corsair VS1GB800D2 1GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kllisre M471A3243BB0-CP50 16GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3200C14-16GTZ 16GB
Samsung M378A1K43EB2-CWE 8GB
Netac Technology Co Ltd E40832A 8GB
Kingston KHX1600C9D3/8G 8GB
Essencore Limited KD4AGU88C-26N1900 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMWX8GF2933Z16W4 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Samsung M471B5173DB0-YK0 4GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
报告一个错误
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Bug description
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