Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 18.1

测试中的平均数值

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 96

左右 -317% 更低的延时
更快的写入速度，GB/s

15.0 1,336.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 23
读取速度，GB/s

2,725.2 18.1
写入速度，GB/s

1,336.0 15.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

438 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramsta Ramsta-2400Mhz-8G 8GB

Ramsta Ramsta-2400Mhz-8G 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

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A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston KHX2400C12D4/8GX 8GB

Kingston KHX2400C12D4/8GX 8GB