RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4000C18-8GTZKK 8GB

Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-4000C18-8GTZKK 8GB

总分
star star star star star
Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZKK 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

差异 规格 评论

差异

Micron Technology 18HTF12872AY-800F1 1GB 需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,107.0 left arrow 10.8
    测试中的平均数值
G Skill Intl F4-4000C18-8GTZKK 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZKK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 58
    左右 -93% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4000C18-8GTZKK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 30
  • 读取速度，GB/s
    4,025.3 left arrow 11.5
  • 写入速度，GB/s
    2,107.0 left arrow 10.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    670 left arrow 2462

Micron Technology 18HTF12872AY-800F1 1GB RAM的比较

Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMD32GX4M4A2800C16 8GB
Corsair CMD32GX4M4A2800C16 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-3200C16-8GSX 8GB
G Skill Intl F4-3200C16-8GSX 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK64GX4M4A2133C13 16GB
Corsair CMK64GX4M4A2133C13 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-4400C16-8GTZR 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Kllisre M378A5143EB2-CRC 4GB
Kllisre M378A5143EB2-CRC 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905678-105.A00G 8GB
Kingston 9905678-105.A00G 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM