RAM comparison SK Hynix HMT351R7EFR8C-RD 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

SK Hynix HMT351R7EFR8C-RD 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Overall score

SK Hynix HMT351R7EFR8C-RD 4GB

Overall score

Differences Specifications Comments

Reasons to consider
SK Hynix HMT351R7EFR8C-RD 4GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Below the latency in the PassMark tests, ns

18 37

Around -106% lower latency
Faster reading speed, GB/s

20.4 9.8

Average value in the tests
Faster write speed, GB/s

17.2 7.2

Average value in the tests
Higher memory bandwidth, mbps

19200 14900

Around 1.29 higher bandwidth

Complete list of technical specifications

SK Hynix HMT351R7EFR8C-RD 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Main characteristics

Other

Description

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2065 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns