RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
15.3
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
72
96
Around -33% lower latency
Faster write speed, GB/s
8.0
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
72
Read speed, GB/s
2,725.2
15.3
Write speed, GB/s
1,336.0
8.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
438
1817
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Kingston KP4T2F-PSB 4GB
V-GEN D4R8GL24A8R 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-2400C17-8GNT 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
TwinMOS 9DNPBNZB-TATP 4GB
G Skill Intl F4-3600C16-8GTZRC 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-2133C15-8GRK 8GB
Report a bug
×
Bug description
Source link