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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
Compare
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB vs Micron Technology 16GB 2133MHz DIMM 16GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Micron Technology 16GB 2133MHz DIMM 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
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Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Micron Technology 16GB 2133MHz DIMM 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
37
Around -61% lower latency
Faster reading speed, GB/s
17.3
16
Average value in the tests
Faster write speed, GB/s
13.2
12.6
Average value in the tests
Specifications
Complete list of technical specifications
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
37
23
Read speed, GB/s
16.0
17.3
Write speed, GB/s
12.6
13.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2808
3233
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
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Micron Technology 16GB 2133MHz DIMM 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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