Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
Samsung M3 78T2863DZS-CE6 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB vs Samsung M3 78T2863DZS-CE6 1GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB

Overall score
star star star star star
Samsung M3 78T2863DZS-CE6 1GB

Samsung M3 78T2863DZS-CE6 1GB

Differences

  • Faster write speed, GB/s
    1,785.9 left arrow 1,728.0
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    61 left arrow 62
    Around -2% lower latency
  • Faster reading speed, GB/s
    3 left arrow 3
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
Samsung M3 78T2863DZS-CE6 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    62 left arrow 61
  • Read speed, GB/s
    3,585.4 left arrow 3,734.9
  • Write speed, GB/s
    1,785.9 left arrow 1,728.0
  • Memory bandwidth, mbps
    5300 left arrow 5300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    555 left arrow 575
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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