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Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
Samsung M3 78T2863DZS-CE6 1GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB vs Samsung M3 78T2863DZS-CE6 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
Overall score
Samsung M3 78T2863DZS-CE6 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
Report a bug
Faster write speed, GB/s
1,785.9
1,728.0
Average value in the tests
Reasons to consider
Samsung M3 78T2863DZS-CE6 1GB
Report a bug
Below the latency in the PassMark tests, ns
61
62
Around -2% lower latency
Faster reading speed, GB/s
3
3
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
Samsung M3 78T2863DZS-CE6 1GB
Main characteristics
Memory type
DDR2
DDR2
Latency in PassMark, ns
62
61
Read speed, GB/s
3,585.4
3,734.9
Write speed, GB/s
1,785.9
1,728.0
Memory bandwidth, mbps
5300
5300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
5-5-5-15 / 667 MHz
5-5-5-15 / 667 MHz
Ranking PassMark (The more the better)
555
575
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB RAM comparisons
Samsung M3 78T2863RZS-CF7 1GB
Samsung M3 78T2863DZS-CE6 1GB RAM comparisons
SK Hynix HYMP112U64CP8-S6 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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