RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Transcend Information TS512MLH64V4H 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Transcend Information TS512MLH64V4H 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Transcend Information TS512MLH64V4H 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Reasons to consider
Transcend Information TS512MLH64V4H 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
25
Around -9% lower latency
Faster reading speed, GB/s
16.6
16.1
Average value in the tests
Faster write speed, GB/s
13.0
10.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Transcend Information TS512MLH64V4H 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
23
Read speed, GB/s
16.1
16.6
Write speed, GB/s
10.1
13.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
2548
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Transcend Information TS512MLH64V4H 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Transcend Information TS512MLH64V4H 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Samsung M378A5244CB0-CTD 4GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMD16GX4M2B3600C18 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Samsung M471B5773DH0-CH9 2GB
Kingston 9905625-152.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR128GX4M8X3800C19 16GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Samsung M471B5273CH0-CH9 4GB
Samsung M393A2G40DB1-CRC 16GB
Nanya Technology M2F2G64CB88B7N-CG 2GB
G Skill Intl F4-4000C19-16GTRG 16GB
SK Hynix HMT325U6BFR8C-H9 2GB
Kingston 99U5700-028.A00G 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMD64GX4M4A2400C14 16GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-2133C15-8GNS 8GB
Report a bug
×
Bug description
Source link