Samsung M378T5663QZ3-CF7 2GB vs Micron Technology 16ATF1G64HZ-2G1B1 8GB

Overall score

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Overall score

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Differences Specifications Comments

Differences

Samsung M378T5663QZ3-CF7 2GB

Reasons to consider
Samsung M378T5663QZ3-CF7 2GB

Faster reading speed, GB/s

4 13.8

Average value in the tests

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Reasons to consider
Micron Technology 16ATF1G64HZ-2G1B1 8GB

Below the latency in the PassMark tests, ns

39 56

Around -44% lower latency
Faster write speed, GB/s

10.5 1,813.5

Average value in the tests
Higher memory bandwidth, mbps

17000 6400

Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378T5663QZ3-CF7 2GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

56 39
Read speed, GB/s

4,387.7 13.8
Write speed, GB/s

1,813.5 10.5
Memory bandwidth, mbps

6400 17000

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

693 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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