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Samsung M395T2863QZ4-CF76 1GB
Inmos + 256MB

Samsung M395T2863QZ4-CF76 1GB vs Inmos + 256MB

Overall score
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score
star star star star star
Inmos + 256MB

Inmos + 256MB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 11.5
    Average value in the tests
Inmos + 256MB Reasons to consider
Inmos + 256MB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 104
    Around -247% lower latency
  • Faster write speed, GB/s
    9.1 left arrow 2,404.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    16800 left arrow 6400
    Around 2.63 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Inmos + 256MB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    104 left arrow 30
  • Read speed, GB/s
    3,192.0 left arrow 11.5
  • Write speed, GB/s
    2,404.5 left arrow 9.1
  • Memory bandwidth, mbps
    6400 left arrow 16800
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    no data left arrow no data
  • Ranking PassMark (The more the better)
    786 left arrow 2318

Samsung M395T2863QZ4-CF76 1GB RAM comparisons

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Micron Technology 8HTF12864HDZ-800E1 1GB

Inmos + 256MB RAM comparisons

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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