takeMS International AG TMS2GB264D081-805U 2GB vs Samsung M378T5663QZ3-CF7 2GB

Overall score

takeMS International AG TMS2GB264D081-805U 2GB

takeMS International AG TMS2GB264D081-805U 2GB

Overall score

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Differences Specifications Comments

Differences

takeMS International AG TMS2GB264D081-805U 2GB

Reasons to consider
takeMS International AG TMS2GB264D081-805U 2GB

Below the latency in the PassMark tests, ns

46 56

Around 18% lower latency
Faster reading speed, GB/s

4 4

Average value in the tests
Faster write speed, GB/s

2,122.7 1,813.5

Average value in the tests

Samsung M378T5663QZ3-CF7 2GB

Reasons to consider
Samsung M378T5663QZ3-CF7 2GB

Specifications

Complete list of technical specifications

takeMS International AG TMS2GB264D081-805U 2GB

Samsung M378T5663QZ3-CF7 2GB

Main characteristics

Memory type

DDR2 DDR2
Latency in PassMark, ns

46 56
Read speed, GB/s

4,831.7 4,387.7
Write speed, GB/s

2,122.7 1,813.5
Memory bandwidth, mbps

6400 6400

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Clock speed

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)

773 693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Latest comparisons

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP26D4U9D8HC-16X 16GB

Kingston HP26D4U9D8HC-16X 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-3300C16-16GTZ 16GB

G Skill Intl F4-3300C16-16GTZ 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Hewlett-Packard 7EH68AA# 16GB

Hewlett-Packard 7EH68AA# 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2400C16-16GFT 16GB

G Skill Intl F4-2400C16-16GFT 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-4000C16-16GVKA 16GB

G Skill Intl F4-4000C16-16GVKA 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F4-3000C15-4GRR 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-2400C15-8GNT 8GB

G Skill Intl F4-2400C15-8GNT 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB