takeMS International AG TMS2GB264D081-805U 2GB vs Samsung M378T5663QZ3-CF7 2GB

総合得点

takeMS International AG TMS2GB264D081-805U 2GB

takeMS International AG TMS2GB264D081-805U 2GB

総合得点

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

相違点仕様コメント

相違点

takeMS International AG TMS2GB264D081-805U 2GB

考慮すべき理由
takeMS International AG TMS2GB264D081-805U 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

46 56

周辺 18% 低遅延
読み出し速度の高速化、GB/s

4 4

テスト平均値
書き込み速度の高速化、GB/s

2,122.7 1,813.5

テスト平均値

Samsung M378T5663QZ3-CF7 2GB

考慮すべき理由
Samsung M378T5663QZ3-CF7 2GB

バグを報告する

仕様

技術仕様の完全リスト

takeMS International AG TMS2GB264D081-805U 2GB

Samsung M378T5663QZ3-CF7 2GB

主な特徴

メモリータイプ

DDR2 DDR2
PassMarkにおけるレイテンシー、ns

46 56
読み出し速度、GB/s

4,831.7 4,387.7
書き込み速度、GB/秒

2,122.7 1,813.5
メモリ帯域幅、mbps

6400 6400

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
タイミング / クロック速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
ランキングPassMark（多ければ多いほど良い）

773 693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

takeMS International AG TMS2GB264D081-805U 2GB

takeMS International AG TMS2GB264D081-805U 2GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

SK Hynix HMA41GS6AFR8N-TF 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M393A4K40BB2-CTD 32GB

Samsung M393A4K40BB2-CTD 32GB