SK Hynix DDR2 800 2G 2GB vs Samsung M378T5663QZ3-CF7 2GB

Note globale

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Note globale

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Différences Spécifications Commentaires

Différences

SK Hynix DDR2 800 2G 2GB

Raisons de considérer
SK Hynix DDR2 800 2G 2GB

Signaler un bogue

Vitesse d'écriture plus rapide, GB/s

1,884.0 1,813.5

Valeur moyenne dans les tests

Samsung M378T5663QZ3-CF7 2GB

Raisons de considérer
Samsung M378T5663QZ3-CF7 2GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

56 77

Autour de -38% latence réduite
Vitesse de lecture plus rapide, GB/s

4 2

Valeur moyenne dans les tests

Spécifications

Liste complète des spécifications techniques

SK Hynix DDR2 800 2G 2GB

Samsung M378T5663QZ3-CF7 2GB

Principales caractéristiques

Type de mémoire

DDR2 DDR2
Latence dans PassMark, ns

77 56
Vitesse de lecture, GB/s

2,936.9 4,387.7
Vitesse d'écriture, GB/s

1,884.0 1,813.5
Largeur de bande de la mémoire, mbps

6400 6400

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
Classement PassMark (Plus il y en a, mieux c'est)

564 693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Dernières comparaisons

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston KF3200C20S4/32GX 32MB

Kingston KF3200C20S4/32GX 32MB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

A-DATA Technology DDR4 4133 8GB

A-DATA Technology DDR4 4133 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Essencore Limited KD48GS481-26N1600 8GB

Essencore Limited KD48GS481-26N1600 8GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

King Tiger Technology TMKU8G868-240U 8GB

King Tiger Technology TMKU8G868-240U 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Transcend Information JM2666HLB-8G 8GB

Transcend Information JM2666HLB-8G 8GB