Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology CT51264BF160B.C16F 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

総合得点

Crucial Technology CT51264BF160B.C16F 4GB

Crucial Technology CT51264BF160B.C16F 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 42

周辺 33% 低遅延

Crucial Technology CT51264BF160B.C16F 4GB

考慮すべき理由
Crucial Technology CT51264BF160B.C16F 4GB

バグを報告する

読み出し速度の高速化、GB/s

12.8 10.9

テスト平均値
書き込み速度の高速化、GB/s

9.0 7.1

テスト平均値
より高いメモリ帯域幅、mbps

12800 8500

周辺 1.51 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Crucial Technology CT51264BF160B.C16F 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

28 42
読み出し速度、GB/s

10.9 12.8
書き込み速度、GB/秒

7.1 9.0
メモリ帯域幅、mbps

8500 12800

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
タイミング / クロック速度

7-7-7-20 / 1066 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

1668 2011

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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