A-DATA Technology DOVF1B163G2G 2GB vs Micron Technology 36ASF4G72PZ-2G6H1 32GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

Micron Technology 36ASF4G72PZ-2G6H1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G6H1 32GB

报告一个错误

低于PassMark测试中的延时，ns

38 56

左右 -47% 更低的延时
更快的读取速度，GB/s

8.9 4

测试中的平均数值
更快的写入速度，GB/s

6.9 1,925.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 38
读取速度，GB/s

4,315.2 8.9
写入速度，GB/s

1,925.7 6.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

658 2206

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

OCZ OCZ2RPR10662G 2GB

OCZ OCZ2RPR10662G 2GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Samsung M471B5673FH0-CF8 2GB

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Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB