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Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-4400C17-8GVK 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs G Skill Intl F4-4400C17-8GVK 8GB

总分
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分
star star star star star
G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB

差异 规格 评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
G Skill Intl F4-4400C17-8GVK 8GB 需要考虑的原因
G Skill Intl F4-4400C17-8GVK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 42
    左右 -75% 更低的延时
  • 更快的读取速度，GB/s
    20.6 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.0 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-4400C17-8GVK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 24
  • 读取速度，GB/s
    13.2 left arrow 20.6
  • 写入速度，GB/s
    9.4 left arrow 20.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2326 left arrow 4029

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

G Skill Intl F4-4400C17-8GVK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Gloway International (HK) STK4U2133D15081C 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3200C18-16GRS 16GB
G Skill Intl F4-3200C18-16GRS 16GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
G Skill Intl F4-3200C14-16GTRS 16GB
G Skill Intl F4-3200C14-16GTRS 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
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Crucial Technology CB16GU2666.C8ET 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
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Corsair CMK128GX4M8X3800C19 16GB
内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Corsair CMWX8GD3600C18W2D 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Shenzhen Xingmem Technology Corp 16GB
内存RAM
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Kingston KVR533D2N4 512MB
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Team Group Inc. DDR4 2666 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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Corsair CMK128GX4M8A2400C14 16GB
内存RAM
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Smart Modular SH564128FH8NZQNSCG 4GB
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Mushkin MRA4S293MMMF32G 32GB
内存RAM
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King Tiger Technology TMKU8G868-240U 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM