RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.C16F 4GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
81
左右 67% 更低的延时
更快的读取速度,GB/s
13.9
13.5
测试中的平均数值
更快的写入速度,GB/s
8.4
7.0
测试中的平均数值
需要考虑的原因
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
81
读取速度,GB/s
13.9
13.5
写入速度,GB/s
8.4
7.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
1523
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB RAM的比较
A-DATA Technology AD4S3200316G22-BHYD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DQKD1A08 1GB
Corsair CMK16GX4M2F4500C19 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Samsung M378B5773DH0-CH9 2GB
Apacer Technology 78.D2GG7.AU30B 16GB
Kingston KHX1600C9D3/4GX 4GB
Corsair CM4X8GE2666C16K8 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston HP24D4S7S8MBP-8 8GB
AMD AE34G1601U1 4GB
Samsung M378A2G43MB1-CTD 16GB
Kingston 9905471-002.A00LF 2GB
A-DATA Technology AD4S320038G22-B 8GB
Samsung M471B5773DH0-CK0 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9965516-112.A00LF 16GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Samsung M471B5173DB0-YK0 4GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
INTENSO 4GB
报告一个错误
×
Bug description
Source link