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Elpida EBJ40UG8EFU0-GN-F 4GB
ASint Technology SLA304G08-EDJ1B 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs ASint Technology SLA304G08-EDJ1B 4GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
ASint Technology SLA304G08-EDJ1B 4GB

ASint Technology SLA304G08-EDJ1B 4GB

差异 规格 评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.0 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
ASint Technology SLA304G08-EDJ1B 4GB 需要考虑的原因
ASint Technology SLA304G08-EDJ1B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 43
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 12.7
    测试中的平均数值

规格

完整的技术规格清单
Elpida EBJ40UG8EFU0-GN-F 4GB
ASint Technology SLA304G08-EDJ1B 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 28
  • 读取速度，GB/s
    12.7 left arrow 13.8
  • 写入速度，GB/s
    8.0 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2350

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

ASint Technology SLA304G08-EDJ1B 4GB RAM的比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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