RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KF2666C13D4/8GX 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Kingston KF2666C13D4/8GX 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 14.1
    测试中的平均数值
Kingston KF2666C13D4/8GX 8GB 需要考虑的原因
Kingston KF2666C13D4/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 49
    左右 -81% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KF2666C13D4/8GX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 27
  • 读取速度，GB/s
    4,577.1 left arrow 16.7
  • 写入速度，GB/s
    2,066.5 left arrow 14.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    737 left arrow 3342

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Kingston KF2666C13D4/8GX 8GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Mushkin MRA4S320GJJM32G 32GB
Mushkin MRA4S320GJJM32G 32GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMT32GX4M2Z3200C16 16GB
Corsair CMT32GX4M2Z3200C16 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2400C15-8GTZR 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M471A1A43DB0-CPB 8GB
内存RAM
Samsung M471A1A43CB1-CRC 8GB
Samsung M471A1A43CB1-CRC 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
Samsung M471B1G73BH0-YK0 8GB
Samsung M471B1G73BH0-YK0 8GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM