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Golden Empire 1GB DDR2 800 CAS=4 1GB
Mushkin MR[A/B]4U320LLLM16G 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Mushkin MR[A/B]4U320LLLM16G 16GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Mushkin MR[A/B]4U320LLLM16G 16GB

Mushkin MR[A/B]4U320LLLM16G 16GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 15.0
    测试中的平均数值
Mushkin MR[A/B]4U320LLLM16G 16GB 需要考虑的原因
Mushkin MR[A/B]4U320LLLM16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 49
    左右 -145% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Mushkin MR[A/B]4U320LLLM16G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 20
  • 读取速度，GB/s
    4,577.1 left arrow 20.0
  • 写入速度，GB/s
    2,066.5 left arrow 15.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 3619

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Mushkin MR[A/B]4U320LLLM16G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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G Skill Intl F4-2666C19-8GIS 8GB
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Micron Technology 9ASF51272PZ-2G1AX 4GB
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Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
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Samsung M471A2K43CB1-CRCR 16GB
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AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
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Smart Modular SMS4TDC3C0K0446SCG 4GB
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Crucial Technology CT51264AC800.C16FC 4GB
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SK Hynix HYMP164U64CP6-Y5 512MB
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SK Hynix HMT325S6BFR8C-H9 2GB
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G Skill Intl F4-3200C14-16GTZKY 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
Samsung M3 78T5663FB3-CF7 2GB
Samsung M3 78T5663FB3-CF7 2GB
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Kingston KHX2666C15D4/4G 4GB
内存RAM
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Patriot Memory (PDP Systems) 2666 C18 Series 16GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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G Skill Intl F4-3200C16-8GSXKB 8GB
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