Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs A-DATA Technology AM1P24HC4R1-BUNS 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 15

测试中的平均数值

A-DATA Technology AM1P24HC4R1-BUNS 4GB

需要考虑的原因
A-DATA Technology AM1P24HC4R1-BUNS 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 65

左右 -110% 更低的延时
更快的写入速度，GB/s

11.9 1,592.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 31
读取速度，GB/s

3,580.8 15.0
写入速度，GB/s

1,592.0 11.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

572 2477

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMWX8GD3600C18W4 8GB

Corsair CMWX8GD3600C18W4 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB