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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3733C17-4GTZ 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3733C17-4GTZ 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
G Skill Intl F4-3733C17-4GTZ 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
16.5
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3733C17-4GTZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
65
左右 -110% 更低的延时
更快的写入速度,GB/s
15.6
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3733C17-4GTZ 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
31
读取速度,GB/s
3,580.8
16.5
写入速度,GB/s
1,592.0
15.6
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
3142
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-3733C17-4GTZ 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DQKD1A08 1GB
Maxsun MSD48G26Q3 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3333C16-16GVR 16GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
Kingston ACR16D3LS1KNG/8G 8GB
Kingston KTD3KX-HYA 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Team Group Inc. UD5-6400 16GB
Kingston 9905599-025.A00G 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-3000C15-4GTZ 4GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Kingston 9965516-112.A00LF 16GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
报告一个错误
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Bug description
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