Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Samsung M378A5244BB0-CRC 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

Samsung M378A5244BB0-CRC 4GB

需要考虑的原因
Samsung M378A5244BB0-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 65

左右 -132% 更低的延时
更快的写入速度，GB/s

11.3 1,592.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Samsung M378A5244BB0-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 28
读取速度，GB/s

3,580.8 16.0
写入速度，GB/s

1,592.0 11.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

572 2436

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Kingston 9905663-006.A00G 16GB

Kingston 9905663-006.A00G 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston KHX2133C14/16G 16GB

Kingston KHX2133C14/16G 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB